In situ GIFAD and SDRS during PbI2 MBE growth on graphene reveal a 1% tensile strain in the first monolayer that relaxes by 3-5 ML, and a 50 meV ARPES shift attributed to charge transfer from graphene to PbI2.
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Correlated Structural and Optical Characterization during Van der Waals Epitaxy of PbI2 on Graphene
In situ GIFAD and SDRS during PbI2 MBE growth on graphene reveal a 1% tensile strain in the first monolayer that relaxes by 3-5 ML, and a 50 meV ARPES shift attributed to charge transfer from graphene to PbI2.