Derives a generalized Kuramoto-Sivashinsky equation for surface morphology under ion irradiation via anisotropic plastic flow hypothesis and reports quantitative agreement with silicon nanopattern experiments.
Swelling as a stabilizing mechanism in irradiated thin films ii: Effect of swelling rate
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Morphological evolution of a semiconductor surface driven by irradiation-induced anisotropic plastic flow
Derives a generalized Kuramoto-Sivashinsky equation for surface morphology under ion irradiation via anisotropic plastic flow hypothesis and reports quantitative agreement with silicon nanopattern experiments.