Edge dislocations in silicon, diamond, germanium, and black phosphorene are predicted to bind mid-gap polarization bands protected by a filling anomaly, while screw dislocations are trivial.
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Topological Dislocation Response in Elementary Semiconductors
Edge dislocations in silicon, diamond, germanium, and black phosphorene are predicted to bind mid-gap polarization bands protected by a filling anomaly, while screw dislocations are trivial.