Inserting a SiNx layer between Al2O3 and diamond in grafted diamond/GaN heterostructures increases band offsets by 0.42 eV compared to Al2O3-only interfaces while preserving type-II band alignment.
Investigation of ultrathin surface passivation layers for GaN: a comparative analysis of Al₂O₃, SiO₂, and SiNₓ in reducing surface recombination
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Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
Inserting a SiNx layer between Al2O3 and diamond in grafted diamond/GaN heterostructures increases band offsets by 0.42 eV compared to Al2O3-only interfaces while preserving type-II band alignment.