A lithography-defined twisted semiconductor moiré device shows strong in-gap resistance oscillations inside the ν=5 quantum Hall state, while the Hall resistance remains quantized.
Bockrath, Kin Fai Mak & Fan Zhang, Reproducibility in the fabrication and physics of moiré materials, Nature 602, 41-50 (2022)
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Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
A lithography-defined twisted semiconductor moiré device shows strong in-gap resistance oscillations inside the ν=5 quantum Hall state, while the Hall resistance remains quantized.