A Monte Carlo model attributes the spectral contrast between heterodyne and photoluminescence detection in SiV ensembles to maximally random strain and a steep strain-dependent dark-state branching ratio.
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Impact of strain and dark states on spectroscopic measurements of silicon-vacancy centers in diamond
A Monte Carlo model attributes the spectral contrast between heterodyne and photoluminescence detection in SiV ensembles to maximally random strain and a steep strain-dependent dark-state branching ratio.