In situ STM tracking shows a single P from dissociated PBr3 on Si(100) exchanges into a P–Si–Br heterodimer upon annealing, with a DFT barrier of 1.44 eV matching doping onset at 175 °C.
Warschkow , author N
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STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)
In situ STM tracking shows a single P from dissociated PBr3 on Si(100) exchanges into a P–Si–Br heterodimer upon annealing, with a DFT barrier of 1.44 eV matching doping onset at 175 °C.