A gate voltage switches the sign of a room-temperature spin-to-charge conversion signal in graphene/MoTe2 heterostructures, with a claimed efficiency of about 7.6 percent.
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All-electrical creation and control of giant spin-galvanic effect in 1T-MoTe2/graphene heterostructures at room temperature
A gate voltage switches the sign of a room-temperature spin-to-charge conversion signal in graphene/MoTe2 heterostructures, with a claimed efficiency of about 7.6 percent.