Amorphous InZnO films with Zn/(In+Zn) ratio around 0.12 and moderate oxygen deficiency act as effective transparent conductive barriers preventing Cu diffusion into Si at 200°C for 20 hours.
Thin film deposition Combinatorial libraries were deposited in an AJA ATC-1500 sputter tool with a confocal sputter-up geometry
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Accelerated development of amorphous InZnO thin films as transparent conductive Cu diffusion barriers
Amorphous InZnO films with Zn/(In+Zn) ratio around 0.12 and moderate oxygen deficiency act as effective transparent conductive barriers preventing Cu diffusion into Si at 200°C for 20 hours.