A waterless cAFM lithography method achieves nonvolatile reconfigurable control of nanoscale polaron-electron liquid transitions at the LaAlO3/SrTiO3 interface with 0.85 nm line resolution at mK temperatures.
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DFT calculations reveal magnetic phase transitions with film thickness in freestanding LaVO3, recovering bulk C-AFM beyond four layers, with surface charge transfer inducing mixed magnetic states and hole doping producing ferromagnetism plus striped charge order.
citing papers explorer
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Reconfigurable Oxide Nanoelectronics by Tip-induced Electron Delocalization
A waterless cAFM lithography method achieves nonvolatile reconfigurable control of nanoscale polaron-electron liquid transitions at the LaAlO3/SrTiO3 interface with 0.85 nm line resolution at mK temperatures.
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Emergent magnetic and charge ordered phases in freestanding ultrathin \ce{LaVO3}
DFT calculations reveal magnetic phase transitions with film thickness in freestanding LaVO3, recovering bulk C-AFM beyond four layers, with surface charge transfer inducing mixed magnetic states and hole doping producing ferromagnetism plus striped charge order.