AlSb in cubic and hexagonal phases shows quasi-direct band gaps of 1.71 eV and 1.50 eV with strong visible-UV absorption and increasing power factor with carrier concentration when computed with mBJ+U.
(2017) Structural, optical and electrical properties of AlSb thin films deposited by pulsed laser deposition using aluminum-antimony alloying target
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Optoelectronic and Thermoelectric Properties of High-Performance AlSb Semiconductors
AlSb in cubic and hexagonal phases shows quasi-direct band gaps of 1.71 eV and 1.50 eV with strong visible-UV absorption and increasing power factor with carrier concentration when computed with mBJ+U.