Nitrogen doping and annealing at 500-600 C increase the ODMR contrast of silicon vacancy ensembles in 4H-SiC by about 3x, with only modest loss of photoluminescence.
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The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
Nitrogen doping and annealing at 500-600 C increase the ODMR contrast of silicon vacancy ensembles in 4H-SiC by about 3x, with only modest loss of photoluminescence.