Confined trilayer Ga in a graphene/SiC heterostructure exhibits hybridization-driven Ising superconductivity with in-plane upper critical field reaching 21.98 T at 400 mK, 3.38 times the Pauli limit, supported by ARPES spin textures and a scattering-adjusted model.
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Orbital Hybridization-Induced Ising-Type Superconductivity in a Confined Gallium Layer
Confined trilayer Ga in a graphene/SiC heterostructure exhibits hybridization-driven Ising superconductivity with in-plane upper critical field reaching 21.98 T at 400 mK, 3.38 times the Pauli limit, supported by ARPES spin textures and a scattering-adjusted model.