A new process of edge ion implantation followed by microwave annealing reduces leakage current at the sensor edges and shows promise for simpler active edge silicon detectors.
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Active Edge Silicon Sensors Fabricated With Edge Ion Implantation and Microwave Annealing for Dopant Activation
A new process of edge ion implantation followed by microwave annealing reduces leakage current at the sensor edges and shows promise for simpler active edge silicon detectors.