Focused silicon ion implantation into HSQ cladding creates confined Si-rich nanoregions that trim cladded PICs with <0.001 dB/π excess loss, multi-month stability, and automated correction of a photonic crossbar array.
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Ion-Implanted Silicon Nanoregions Enable Ultra-Low-Loss Trimming of Cladded Photonic Integrated Circuits
Focused silicon ion implantation into HSQ cladding creates confined Si-rich nanoregions that trim cladded PICs with <0.001 dB/π excess loss, multi-month stability, and automated correction of a photonic crossbar array.