A new microscopic model maps quantum dot device geometry directly to flopping-mode qubit parameters, reveals a tradeoff between fast electric driving and clean Rabi oscillations, and derives exchange coupling for capacitively coupled qubits.
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cond-mat.mes-hall 2years
2026 2verdicts
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A flexible optimization framework is introduced to suppress in-plane g-tensor components in SiGe-Ge-SiGe quantum wells by tuning silicon concentration, enabling gapless single-spin qubit encoding.
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Microscopic modeling of flopping-mode quantum dot spin qubits
A new microscopic model maps quantum dot device geometry directly to flopping-mode qubit parameters, reveals a tradeoff between fast electric driving and clean Rabi oscillations, and derives exchange coupling for capacitively coupled qubits.
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g-tensor Optimization in Ge/SiGe Quantum Dots
A flexible optimization framework is introduced to suppress in-plane g-tensor components in SiGe-Ge-SiGe quantum wells by tuning silicon concentration, enabling gapless single-spin qubit encoding.