After correcting the Hall number for chain-plane resistivity anisotropy, the planar carrier density in overdoped YBCO rises gradually and only partially recovers the full Fermi volume at p*, disfavoring a pseudogap quantum critical point.
The coincidence of the three data sets suggests a universal mechanism governing the emer- gence of mobile carriers acrossp ∗ and into the overdoped ‘strange metal’ regime
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Doping dependence of the low temperature planar carrier density in overdoped YBa$_2$Cu$_3$O$_{7-\delta}$
After correcting the Hall number for chain-plane resistivity anisotropy, the planar carrier density in overdoped YBCO rises gradually and only partially recovers the full Fermi volume at p*, disfavoring a pseudogap quantum critical point.