GAP-based molecular dynamics reveals a two-step, amorphization-mediated Si-I to Si-V transition in 10 nm silicon nanoparticles under triaxial compression, with a reversible amorphous-Si to Si-V memory effect.
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Amorphization-Mediated Si-I to Si-V Phase Transition and Reversible Amorphous-Si-V Phase Memory in Silicon Nanoparticles
GAP-based molecular dynamics reveals a two-step, amorphization-mediated Si-I to Si-V transition in 10 nm silicon nanoparticles under triaxial compression, with a reversible amorphous-Si to Si-V memory effect.