First experimental realization of spectral diffusion mitigation in a solid-state emitter via periodic optical pi-pulses, concentrating roughly half the absorption at a freely chosen target frequency and reducing the inhomogeneously broadened linewidth near the lifetime limit.
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4 Pith papers cite this work. Polarity classification is still indexing.
representative citing papers
Carbon-nitrogen interstitial pairs and oxygen-containing complexes are identified as the likely atomic structures for the N-line series in silicon, offering isoelectronic alternatives to the T-center for spin qubits.
Gate-based RF reflectometry on large-area SiC transistors shows gate-dependent response that degrades at cryogenic temperatures due to carrier freeze-out in the drift region, with a proposed modified circuit to restore sensitivity.
The paper overviews prominent SiC defects for spin-photon interfaces and models a memory-enhanced quantum communication protocol to extract parameters needed to outperform direct point-to-point links.
citing papers explorer
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Spectral Diffusion Mitigation with a Laser Pulse Sequence
First experimental realization of spectral diffusion mitigation in a solid-state emitter via periodic optical pi-pulses, concentrating roughly half the absorption at a freely chosen target frequency and reducing the inhomogeneously broadened linewidth near the lifetime limit.
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First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon
Carbon-nitrogen interstitial pairs and oxygen-containing complexes are identified as the likely atomic structures for the N-line series in silicon, offering isoelectronic alternatives to the T-center for spin qubits.
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Radio-frequency reflectometry in silicon carbide large-area transistors
Gate-based RF reflectometry on large-area SiC transistors shows gate-dependent response that degrades at cryogenic temperatures due to carrier freeze-out in the drift region, with a proposed modified circuit to restore sensitivity.
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Quantum communication networks with defects in silicon carbide
The paper overviews prominent SiC defects for spin-photon interfaces and models a memory-enhanced quantum communication protocol to extract parameters needed to outperform direct point-to-point links.