Symmetry-adapted analysis of screw dislocations in GaN identifies band-connectivity constraints, dipole selection rules, and a core piezoelectric effect that suppresses radiative recombination in favor of non-radiative capture.
Huang, Lattice relaxation and multiphonon transi- tions, Contemporary Physics22, 599 (1981)
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Symmetry Adapted Analysis of Screw Dislocation: Electronic Structure and Carrier Recombination Mechanisms in GaN
Symmetry-adapted analysis of screw dislocations in GaN identifies band-connectivity constraints, dipole selection rules, and a core piezoelectric effect that suppresses radiative recombination in favor of non-radiative capture.