A Poisson-Schrodinger band-bending model estimates the mobile carrier density in thin topological insulator films from surface Fermi level and gate-dependent transport, without knowing the film's dopant concentration.
It can be prepared at room temperature by depositing Te on top of a re- constructed Si(111)-(7×7) surface
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Parasitic conduction channels in topological insulator thin films
A Poisson-Schrodinger band-bending model estimates the mobile carrier density in thin topological insulator films from surface Fermi level and gate-dependent transport, without knowing the film's dopant concentration.