Afterpulse time constant below 10 ns and probability below 6% for 3-5 V overvoltage in SiPMs, with no significant dependence on neutron fluence up to 1e13 cm^-2.
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Characterization of afterpulse in SiPMs with single-cell readout as a function of bias voltage and fluence
Afterpulse time constant below 10 ns and probability below 6% for 3-5 V overvoltage in SiPMs, with no significant dependence on neutron fluence up to 1e13 cm^-2.