EBSD pattern quality metrics in silicon exhibit strong modulations that follow the underlying electron channeling pattern in both raw and corrected data.
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3 Pith papers cite this work. Polarity classification is still indexing.
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cond-mat.mtrl-sci 3years
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A DIC-based global refinement yields a single consistent sample-detector geometry for EBSD, enhancing orientation consistency and pseudosymmetry discrimination over Nelder-Mead and differential evolution methods.
Recrystallization boundary migration in high-purity Al is modulated by the anisotropy of local internal stress states, with no observed shear-coupled motion.
citing papers explorer
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Channeling-in channeling-out revisited: selected area electron channeling and electron backscatter diffraction
EBSD pattern quality metrics in silicon exhibit strong modulations that follow the underlying electron channeling pattern in both raw and corrected data.
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Global DIC-based sample-detector geometry refinement for accurate EBSD indexing
A DIC-based global refinement yields a single consistent sample-detector geometry for EBSD, enhancing orientation consistency and pseudosymmetry discrimination over Nelder-Mead and differential evolution methods.
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On stress-assisted boundary migration during recrystallization
Recrystallization boundary migration in high-purity Al is modulated by the anisotropy of local internal stress states, with no observed shear-coupled motion.