In a ground-level-like mixed radiation field, 65 nm 6T SRAM cells show about 1.45x higher SEU cross-section than 8T cells, supporting the use of these memories as radiation monitors.
Analysis of radiation -hardening techniques for 6 T SRAMs with structured layouts
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Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment
In a ground-level-like mixed radiation field, 65 nm 6T SRAM cells show about 1.45x higher SEU cross-section than 8T cells, supporting the use of these memories as radiation monitors.