AP-CVD at 140°C under atmospheric conditions yields H:In2O3 TCO films with 7.20 Ohm/sq sheet resistance, 0.50 mOhm.cm resistivity, and up to 89% NIR transmittance, outperforming sputtered ITO.
A multifunctional interlayer for solution processed high performance indium oxide transistors
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Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films
AP-CVD at 140°C under atmospheric conditions yields H:In2O3 TCO films with 7.20 Ohm/sq sheet resistance, 0.50 mOhm.cm resistivity, and up to 89% NIR transmittance, outperforming sputtered ITO.