HfO2-gated InAs-on-insulator Josephson field effect transistors fully suppress switching current and raise normal-state resistance up to 20 times with negative gate voltages, outperforming Al2O3-gated devices.
De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F
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Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics
HfO2-gated InAs-on-insulator Josephson field effect transistors fully suppress switching current and raise normal-state resistance up to 20 times with negative gate voltages, outperforming Al2O3-gated devices.