Inserting a SiNx layer between Al2O3 and diamond in grafted diamond/GaN heterostructures increases band offsets by 0.42 eV compared to Al2O3-only interfaces while preserving type-II band alignment.
Band alignment and leakage mechanism analysis of p -Si/n-AlN heterojunction diodes with the Al ₂O₃ interlayer
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
Inserting a SiNx layer between Al2O3 and diamond in grafted diamond/GaN heterostructures increases band offsets by 0.42 eV compared to Al2O3-only interfaces while preserving type-II band alignment.