Inserting a SiNx layer between Al2O3 and diamond in grafted diamond/GaN heterostructures increases band offsets by 0.42 eV compared to Al2O3-only interfaces while preserving type-II band alignment.
Characteristics of grafted monocrystalline Si/β-Ga2O3 p–n heterojunction
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Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
Inserting a SiNx layer between Al2O3 and diamond in grafted diamond/GaN heterostructures increases band offsets by 0.42 eV compared to Al2O3-only interfaces while preserving type-II band alignment.