Under high pressure, nanodiamonds resist graphitization up to about 1800 K at 2 GPa and 2120 K at 4 GPa, a window that enables annealing and partial recovery of SiV fine structure.
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Nanoscale graphitization and defect evolution in silicon-vacancy center-containing nanodiamonds under high-pressure high-temperature annealing
Under high pressure, nanodiamonds resist graphitization up to about 1800 K at 2 GPa and 2120 K at 4 GPa, a window that enables annealing and partial recovery of SiV fine structure.