TbAlGe exhibits antiferromagnetic transitions at 40 K and 8 K with a cascade of a-axis-only metamagnetic transitions mapped into a phase diagram up to 41.5 T, highlighting localized 4f magnetism interacting with itinerant topology.
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Reinforcement fine-tuning of a generative model produces new topological insulators and crystalline insulators, exemplified by Ge2Bi2O6 with a 0.26 eV full band gap.
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Anisotropic metamagnetism and magnetotransport of heavy rare-earth orthorhombic single-crystal TbAlGe
TbAlGe exhibits antiferromagnetic transitions at 40 K and 8 K with a cascade of a-axis-only metamagnetic transitions mapped into a phase diagram up to 41.5 T, highlighting localized 4f magnetism interacting with itinerant topology.
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Design Topological Materials by Reinforcement Fine-Tuned Generative Model
Reinforcement fine-tuning of a generative model produces new topological insulators and crystalline insulators, exemplified by Ge2Bi2O6 with a 0.26 eV full band gap.