Reverse sputtering at 75 W for 10 s converts the MoS2 under metal contacts into a more conductive, defective phase and cuts the extracted contact resistance to less than half the untreated value.
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Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Reverse sputtering at 75 W for 10 s converts the MoS2 under metal contacts into a more conductive, defective phase and cuts the extracted contact resistance to less than half the untreated value.