(Ba,K)(Cd,Mn)2As2 shows colossal negative magnetoresistance reaching approximately -100% at 2 K that saturates near 0.35 T.
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Time-resolved THz polarimetry detects a helicity-dependent anomalous Hall conductivity in silicon that persists long after excitation and is independent of photon energy, pointing to an inverse orbital Hall effect.
Nickel intercalated beneath epitaxial graphene on SiC(0001) via colloidal nanoparticles and annealing forms stable 2D heterostructures with preserved graphene bands and interfacial magnetism of 0.9 μB per Ni atom.
citing papers explorer
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Colossal low-field negative magnetoresistance in CaAl$_{2}$Si$_{2}$-type diluted magnetic semiconductors (Ba,K)(Cd,Mn)$_{2}$As$_{2}$
(Ba,K)(Cd,Mn)2As2 shows colossal negative magnetoresistance reaching approximately -100% at 2 K that saturates near 0.35 T.
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Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry
Time-resolved THz polarimetry detects a helicity-dependent anomalous Hall conductivity in silicon that persists long after excitation and is independent of photon energy, pointing to an inverse orbital Hall effect.
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Nickel intercalation in epitaxial graphene on SiC(0001): a novel platform for engineering two-dimensional heterostructures
Nickel intercalated beneath epitaxial graphene on SiC(0001) via colloidal nanoparticles and annealing forms stable 2D heterostructures with preserved graphene bands and interfacial magnetism of 0.9 μB per Ni atom.