Molecular dynamics simulations find that both I and MA defects in MAPbI3 diffuse rapidly at room temperature with barriers of 0.15-0.20 eV, with MA interstitials moving via concerted mechanisms and no MA vacancy migration observed.
and Mosconi, Edoardo and Bisquert, Juan and De Angelis, Filippo
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Reverse bias induces iodide oxidation and vacancy creation in perovskites, raising mobile ion density above 10^18 cm^{-3} within minutes and explaining tunneling breakdown.
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A Unified microscopic picture of cation and anion migration in MAPbI$_3$
Molecular dynamics simulations find that both I and MA defects in MAPbI3 diffuse rapidly at room temperature with barriers of 0.15-0.20 eV, with MA interstitials moving via concerted mechanisms and no MA vacancy migration observed.
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Electrochemical reactions under reverse bias create additional mobile ions that enable hole tunneling in metal halide perovskite diodes
Reverse bias induces iodide oxidation and vacancy creation in perovskites, raising mobile ion density above 10^18 cm^{-3} within minutes and explaining tunneling breakdown.