Gate-based RF reflectometry on large-area SiC transistors shows gate-dependent response that degrades at cryogenic temperatures due to carrier freeze-out in the drift region, with a proposed modified circuit to restore sensitivity.
Our aluminium bond wires have a length ofl≈5 mm and diameter 50µm (r= 25µm), henceL bw ≈5 nH
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Radio-frequency reflectometry in silicon carbide large-area transistors
Gate-based RF reflectometry on large-area SiC transistors shows gate-dependent response that degrades at cryogenic temperatures due to carrier freeze-out in the drift region, with a proposed modified circuit to restore sensitivity.