InAs/EuS grown coherently; Fermi level sits in InAs conduction band and EuS gap; magnetic moments stay in EuS with a suppressed moment at the interface and no detectable induced InAs moment.
Regarding ASLD, Eu atoms are characterized by a non-neglec table neutron absorption cross-section, which is wavelength-dependent (J
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Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure
InAs/EuS grown coherently; Fermi level sits in InAs conduction band and EuS gap; magnetic moments stay in EuS with a suppressed moment at the interface and no detectable induced InAs moment.