A fully cryogenic on-wafer setup performs simultaneous S-parameter, noise parameter, and I-V measurements of 14 nm FinFETs and LNAs at 4 K, with noise temperatures validated against independent methods.
A 1.6-mw cryogenic sige lna ic for quantum readout applications achieving 2.6-k average noise temperature from 3 to 6 ghz
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Direct On-Wafer Measurements of Noise Parameters in C- and X-bands at $T=4$ K
A fully cryogenic on-wafer setup performs simultaneous S-parameter, noise parameter, and I-V measurements of 14 nm FinFETs and LNAs at 4 K, with noise temperatures validated against independent methods.