Pressure lowers the symmetry of the Nb3 trimer in Nb3Cl8, widens the bands, and shrinks the cluster Mott gap from 1.0 eV to 0.58 eV in bulk, without destroying the insulating state.
Universality and Critical Behavior at the Mott transition
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abstract
We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott-insulator to metal critical endpoint is investigated in detail as a function of pressure and temperature. The critical exponents are determined, as well as the scaling function associated with the equation of state. The universal properties of a liquid-gas transition are found. This is potentially a generic description of the Mott critical endpoint in correlated electron materials.
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Resilient cluster Mott states in layered Nb$_3$Cl$_8$ against pressure-induced symmetry breaking
Pressure lowers the symmetry of the Nb3 trimer in Nb3Cl8, widens the bands, and shrinks the cluster Mott gap from 1.0 eV to 0.58 eV in bulk, without destroying the insulating state.