ZnTe's THz dielectric function undergoes substantial transient modification from two-photon-generated free carriers and activated phonon modes under typical 800 nm excitation conditions.
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Time-dependent THz dielectric function of ZnTe under two-photon optical excitation at 800 nm wavelength
ZnTe's THz dielectric function undergoes substantial transient modification from two-photon-generated free carriers and activated phonon modes under typical 800 nm excitation conditions.