Oxygen vacancies stabilize the ferroelectric orthorhombic phase o-III in small Hf0.5Zr0.5O2 nanoparticles via chemical strain and reduced depolarization fields.
Ferroelectricity in hafnium oxide thin films,
2 Pith papers cite this work. Polarity classification is still indexing.
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UNVERDICTED 2representative citing papers
TiO2 FeFETs with HZO ferroelectric dielectric layers achieve on/off ratios up to 10^7, off-state leakage below 10^-12 A, and memory windows of 3-8 V across varied gate and channel lengths.
citing papers explorer
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Role of Oxygen Vacancies in Stabilizing the Orthorhombic Phases of Hf0.5Zr0.5O2 Nanoparticles
Oxygen vacancies stabilize the ferroelectric orthorhombic phase o-III in small Hf0.5Zr0.5O2 nanoparticles via chemical strain and reduced depolarization fields.
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High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing
TiO2 FeFETs with HZO ferroelectric dielectric layers achieve on/off ratios up to 10^7, off-state leakage below 10^-12 A, and memory windows of 3-8 V across varied gate and channel lengths.