Gate-biased near-IR illumination alters oxide-semiconductor trapped charge to individually tune Si/SiGe quantum dot operating voltages to uniformity while leaving charge noise unchanged.
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Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
Gate-biased near-IR illumination alters oxide-semiconductor trapped charge to individually tune Si/SiGe quantum dot operating voltages to uniformity while leaving charge noise unchanged.