Time-resolved THz polarimetry detects a helicity-dependent anomalous Hall conductivity in silicon that persists long after excitation and is independent of photon energy, pointing to an inverse orbital Hall effect.
A natural question arises regarding the behavior of this technique when applied to Si, a material characterized by markedly weaker SOC
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Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry
Time-resolved THz polarimetry detects a helicity-dependent anomalous Hall conductivity in silicon that persists long after excitation and is independent of photon energy, pointing to an inverse orbital Hall effect.