Broad-interface, thinner Si/SiGe quantum wells increase the average valley splitting by up to 2x in 2DEGs while keeping disorder low, with simulations suggesting the gain carries into quantum dots.
A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
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Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
Broad-interface, thinner Si/SiGe quantum wells increase the average valley splitting by up to 2x in 2DEGs while keeping disorder low, with simulations suggesting the gain carries into quantum dots.