Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.
Experimental and theoretical investigation of the electronic structure of Cu2O and CuO thin films on Cu(110) using x -ray photoelectron a nd absorption spectroscopy
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Boron-assisted stabilization of low-resistivity mixed-valence Cu-O thin films prepared by reactive magnetron sputtering
Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.