An acoustic phonon model with a finite Debye temperature fits the measured linewidth broadening of GaN defect emitters as well as the previously proposed optical phonon model.
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Acoustic Phonon-Induced Dephasing in Gallium Nitride Defect-Based Quantum Emitters
An acoustic phonon model with a finite Debye temperature fits the measured linewidth broadening of GaN defect emitters as well as the previously proposed optical phonon model.