HIMoC devices produce threshold-voltage shifts from 24.8 MeV/u heavy ions that are modeled as Gaussian charge-loss profiles and scale linearly with fluence times LET times area.
A model for the channel potential of charge-trapping memories and its implica- tions for device scaling
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A Heavy Ion Monitor on a Chip Based on a Non-Volatile Memory Architecture -- Part II: Device Characterization & Modeling
HIMoC devices produce threshold-voltage shifts from 24.8 MeV/u heavy ions that are modeled as Gaussian charge-loss profiles and scale linearly with fluence times LET times area.