A 22-nm FDSOI CMOS chip with 384 p-type silicon quantum dots and on-chip electronics is characterized at deep cryogenic temperatures, linking device dimensions to yield and charge noise.
Probing single electrons across 300-mm spin qubit wafers,
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Large-scale characterization of Single-Hole Transistors in 22-nm FDSOI CMOS Technology
A 22-nm FDSOI CMOS chip with 384 p-type silicon quantum dots and on-chip electronics is characterized at deep cryogenic temperatures, linking device dimensions to yield and charge noise.