Plasma-enhanced ALD deposits predominantly alpha-Ga2O3 on sapphire at 250 to 350°C without annealing, with the alpha phase showing the largest measured optical bandgap of about 5.2 eV.
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Low temperature growth and optical properties of {\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Plasma-enhanced ALD deposits predominantly alpha-Ga2O3 on sapphire at 250 to 350°C without annealing, with the alpha phase showing the largest measured optical bandgap of about 5.2 eV.