Incubation time for Ga-assisted GaAs nanowire growth on Si(111) increases with lower As flux and higher temperature, becoming infinite beyond a minimum As flux (larger at higher T) and above ~640°C, as measured by RHEED and fit by a nucleation model.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2019 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)
Incubation time for Ga-assisted GaAs nanowire growth on Si(111) increases with lower As flux and higher temperature, becoming infinite beyond a minimum As flux (larger at higher T) and above ~640°C, as measured by RHEED and fit by a nucleation model.