Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.
Electronic structures of C u2 O, C u4 O3, and CuO: A joint experimental and theoretical study
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Boron-assisted stabilization of low-resistivity mixed-valence Cu-O thin films prepared by reactive magnetron sputtering
Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.