Strain-free In0.7Ga0.3As/In0.7Al0.3As QDs with C3v symmetry grown via local droplet etching on GaAs(111)A emit single photons at 1400-1600 nm with lifetimes 1.3-1.9 ns, linewidths ~300 μeV, and g^(2)(0)=0.141.
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Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band
Strain-free In0.7Ga0.3As/In0.7Al0.3As QDs with C3v symmetry grown via local droplet etching on GaAs(111)A emit single photons at 1400-1600 nm with lifetimes 1.3-1.9 ns, linewidths ~300 μeV, and g^(2)(0)=0.141.